| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -21.0 A |
| Case/Package | TO-247 |
| Power Rating | 180 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.2 Ω |
| Polarity | P-Channel |
| Power Dissipation | 180 W |
| Input Capacitance | 1400pF @25V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | -100 V |
| Continuous Drain Current (Ids) | -21.0 A |
| Rise Time | 73.0 ns |
| Input Capacitance (Ciss) | 1400pF @25V(Vds) |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 180 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 5.31 mm |
| Size-Height | 20.82 mm |
| Operating Temperature | -55℃ ~ 175℃ |
The IRFP9140PBF is a -100V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Easy to parallel
● Simple drive requirement
● Isolated central mounting hole
● Fast switching
● 175°C Operating temperature
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