TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 1.2 Ω |
Polarity | N-Channel |
Power Dissipation | 150 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 600 V |
Continuous Drain Current (Ids) | 6.80 A |
Input Capacitance (Ciss) | 1300pF @25V(Vds) |
Input Power (Max) | 150 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 150 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 15.87 mm |
Size-Width | 5.31 mm |
Size-Height | 20.7 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Minimum Packing Quantity | 500 |
The IRFPC40PBF is a 600V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Fast switching
● Ease of paralleling
● Simple drive requirements
VISHAY
9 Pages / 1.48 MByte
VISHAY
9 Pages / 1.45 MByte
VISHAY
2 Pages / 0.2 MByte
VISHAY
7 Pages / 0.12 MByte
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International Rectifier
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