TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 800 V |
Current Rating | 5.40 A |
Case/Package | TO-247 |
Power Rating | 150 W |
Drain to Source Resistance (on) (Rds) | 2 Ω |
Polarity | N-Channel |
Power Dissipation | 150 W |
Input Capacitance | 1900pF @25V |
Drain to Source Voltage (Vds) | 800 V |
Breakdown Voltage (Drain to Source) | 800 V |
Continuous Drain Current (Ids) | 5.40 A |
Rise Time | 36 ns |
Input Capacitance (Ciss) | 1900pF @25V(Vds) |
Fall Time | 32 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 150 W |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
Size-Length | 15.87 mm |
Size-Width | 5.31 mm |
Size-Height | 20.7 mm |
Operating Temperature | -55℃ ~ 150℃ |
Vishay Semiconductor
8 Pages / 1.45 MByte
Vishay Semiconductor
9 Pages / 0.78 MByte
Vishay Siliconix
MOSFET N-CH 800V 5.4A TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 800V 5.4A 3Pin(3+Tab) TO-247AC
Infineon
Infineon Technologies IRFPE40, MOSFET N channel 5.4A 800V
IRF
Power MOSFET(Vdss=800V, Rds(on)=2Ω, Id=5.4A)
VISHAY
TO-247-3 N-CH 800V 5.4A 2Ω
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 2Ω; ID 5.4A; TO-247AC; PD 150W; VGS +/-20V
International Rectifier
MOSFET N-CH 800V 5.4A TO-247AC
Vishay Siliconix
MOSFET N-CH 800V 5.4A TO-247AC
Vishay Intertechnology
Power Field-Effect Transistor, 5.4A I(D), 800V, 2Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3Pin
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.