TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 800 V |
Current Rating | 7.80 A |
Case/Package | TO-247 |
Power Rating | 190 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 1.2 Ω |
Polarity | N-Channel |
Power Dissipation | 190 W |
Threshold Voltage | 4 V |
Input Capacitance | 3100pF @25V |
Drain to Source Voltage (Vds) | 800 V |
Breakdown Voltage (Drain to Source) | 800 V |
Continuous Drain Current (Ids) | 7.80 A |
Rise Time | 38 ns |
Input Capacitance (Ciss) | 3100pF @25V(Vds) |
Fall Time | 39 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 190 W |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
Size-Length | 15.87 mm |
Size-Width | 5.31 mm |
Size-Height | 20.7 mm |
Operating Temperature | -55℃ ~ 150℃ |
The IRFPE50PBF is a 800V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● Simple drive requirement
● Repetitive avalanche rating
● Easy to parallel
● Dynamic dV/dt rating
● Ease of paralleling
● Simple drive requirements
● ±20V Gate to source voltage
● 0.65°C/W Thermal resistance, junction to case
● 40°C/W Thermal resistance, junction to ambient
Vishay Semiconductor
9 Pages / 1.57 MByte
Vishay Semiconductor
9 Pages / 1.57 MByte
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