| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 800 V |
| Current Rating | 7.80 A |
| Case/Package | TO-247-3 |
| Power Rating | 190 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.2 Ω |
| Polarity | N-Channel |
| Power Dissipation | 190 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 800 V |
| Breakdown Voltage (Drain to Source) | 800 V |
| Continuous Drain Current (Ids) | 7.80 A |
| Rise Time | 38 ns |
| Input Capacitance (Ciss) | 3100pF @25V(Vds) |
| Input Power (Max) | 190 W |
| Fall Time | 39 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 190 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 5.31 mm |
| Size-Height | 20.7 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 500 |
The IRFPE50PBF is a 800V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
VISHAY
11 Pages / 1.6 MByte
VISHAY
19 Pages / 0.34 MByte
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