| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 150 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 2.5 Ω |
| Polarity | N-Channel |
| Power Dissipation | 150 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 900 V |
| Continuous Drain Current (Ids) | 4.70 A |
| Rise Time | 36 ns |
| Input Capacitance (Ciss) | 1600pF @25V(Vds) |
| Input Power (Max) | 150 W |
| Fall Time | 32 ns |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 500 |
Single N-Channel 900 V 2.5 Ohms Flange Mount Power Mosfet - TO-247AC
VISHAY
9 Pages / 1.62 MByte
VISHAY
10 Pages / 0.16 MByte
International Rectifier
MOSFET N-CH 900V 4.7A TO-247AC
Vishay Siliconix
MOSFET N-CH 900V 4.7A TO-247AC
Vishay Intertechnology
Power Field-Effect Transistor, 4.7A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
Vishay Semiconductor
Trans MOSFET N-CH 900V 4.7A 3Pin(3+Tab) TO-247AC
VISHAY
TO-247-3 N-CH 900V 4.7A 2.5Ω
Vishay Semiconductor
VISHAY IRFPF40PBF Power MOSFET, N Channel, 4.7A, 900V, 2.5Ω, 10V, 4V
Vishay Siliconix
MOSFET N-CH 900V 4.7A TO-247AC
International Rectifier
900V Single N-Channel HEXFET Power MOSFET in a TO-247AC packagel
Vishay Intertechnology
Power Field-Effect Transistor, 4.7A I(D), 900V, 2.5Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3Pin
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
