TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Power Dissipation | 190 W |
Drain to Source Voltage (Vds) | 900 V |
Rise Time | 34 ns |
Input Capacitance (Ciss) | 2900pF @25V(Vds) |
Fall Time | 37 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 190W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 900V 6.7A (Tc) 190W (Tc) Through Hole TO-247-3
Vishay Siliconix
9 Pages / 1.43 MByte
Vishay Siliconix
9 Pages / 1.44 MByte
VISHAY
TO-247-3 N-CH 900V 6.7A 1.6Ω
International Rectifier
Trans MOSFET N-CH 900V 6.7A 3Pin(3+Tab) TO-247AC Trans MOSFET N-CH 900V 6.7A 3Pin(3+Tab) TO-247AC Trans MOSFET N-CH...
Vishay Siliconix
MOSFET N-CH 900V 6.7A TO-247AC
Vishay Semiconductor
Trans MOSFET N-CH 900V 6.7A 3Pin(3+Tab) TO-247AC
VISHAY
Trans MOSFET N-CH 900V 6.7A 3Pin(3+Tab) TO-247AC
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 900V; RDS(ON) 1.6Ω; ID 6.7A; TO-247AC; PD 190W; VGS +/-20
International Rectifier
900V Single N-Channel HEXFET Power MOSFET in a TO-247AC packagel
Vishay Siliconix
Trans MOSFET N-CH 900V 6.7A 3Pin(3+Tab) TO-247AC
Vishay Intertechnology
Power Field-Effect Transistor, 6.7A I(D), 900V, 1.6Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3Pin
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.