| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.00 kV |
| Current Rating | 4.30 A |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 3.5 Ω |
| Polarity | N-Channel |
| Power Dissipation | 150 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 1600pF @25V |
| Drain to Source Voltage (Vds) | 1 kV |
| Breakdown Voltage (Drain to Source) | 1000 V |
| Continuous Drain Current (Ids) | 4.30 A |
| Rise Time | 33.0 ns |
| Input Capacitance (Ciss) | 1600pF @25V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 5.31 mm |
| Size-Height | 20.7 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The IRFPG40PBF is a 1000V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Easy to parallel
● Simple drive requirement
● Isolated central mounting hole
● Fast switching
● 150°C Operating temperature
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