| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.00 kV |
| Current Rating | 6.10 A |
| Case/Package | TO-247-3 |
| Power Rating | 190 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 2 Ω |
| Polarity | N-Channel |
| Power Dissipation | 180 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 2800pF @25V |
| Drain to Source Voltage (Vds) | 1 kV |
| Breakdown Voltage (Drain to Source) | 1000 V |
| Continuous Drain Current (Ids) | 6.10 A |
| Rise Time | 35 ns |
| Input Capacitance (Ciss) | 2800pF @25V(Vds) |
| Fall Time | 36 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 190 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 5.31 mm |
| Size-Height | 20.7 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The IRFPG50PBF is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Fast switching
● Ease of paralleling
● Simple drive requirements
● Isolated central mounting hole
Vishay Semiconductor
9 Pages / 1.06 MByte
Vishay Semiconductor
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