TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 1.00 kV |
Current Rating | 6.10 A |
Case/Package | TO-247-3 |
Power Rating | 190 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 2 Ω |
Polarity | N-Channel |
Power Dissipation | 190 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 1000 V |
Breakdown Voltage (Drain to Source) | 1.00 kV |
Continuous Drain Current (Ids) | 6.10 A |
Rise Time | 35.0 ns |
Input Capacitance (Ciss) | 2800pF @25V(Vds) |
Input Power (Max) | 190 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 190 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 15.87 mm |
Size-Width | 5.31 mm |
Size-Height | 20.7 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Minimum Packing Quantity | 500 |
Single N-Channel 1000 V 2 O 190 nC Power Mosfet - TO-247AC
VISHAY
8 Pages / 0.25 MByte
VISHAY
9 Pages / 1.06 MByte
Vishay Siliconix
MOSFET N-CH 1000V 6.1A TO-247AC
International Rectifier
IR IRFPG50 Single-Gate MOSFET Transistors N-Chan1000V 6.1A
Vishay Semiconductor
Trans MOSFET N-CH 1kV 6.1A 3Pin(3+Tab) TO-247AC
IRF
Power MOSFET(Vdss=1000V, Rds(on)=2Ω, Id=6.1A)
VISHAY
TO-247-3 N-CH 1000V 6.1A 2Ω
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 1000V; RDS(ON) 2Ω; ID 6.1A; TO-247AC; PD 190W; VGS +/-20V
International Rectifier
1000V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Vishay Siliconix
MOSFET N-CH 1000V 6.1A TO-247AC
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.