| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 441 W |
| Polarity | N-Channel |
| Power Dissipation | 580 W |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 170A |
| Rise Time | 270 ns |
| Input Capacitance (Ciss) | 6790pF @25V(Vds) |
| Input Power (Max) | 580 W |
| Fall Time | 140 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 580W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 15.87 mm |
| Size-Width | 5.31 mm |
| Size-Height | 20.7 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
Infineon
4 Pages / 0.14 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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1 Pages / 0.15 MByte
International Rectifier
MOSFET 100V SINGLE N-CH 9mOhms 260NC
IRF
Power MOSFET(Vdss=100V, Rds(on)=0.009Ω, Id=170A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.009Ω; ID 170A; Super-247; PD 580W; gFS 52S
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