| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 500 V |
| Current Rating | 46.0 A |
| Case/Package | TO-274 |
| Polarity | N-Channel |
| Power Dissipation | 450 W |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Continuous Drain Current (Ids) | 46.0 A |
| Rise Time | 170 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
International Rectifier
9 Pages / 0.18 MByte
International Rectifier
8 Pages / 0.15 MByte
VISHAY
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.087Ω; ID 46A; TO-274AA; PD 540W; VGS +/-30V
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.087Ω; ID 46A; TO-274AA; PD 540W; VGS +/-30V
International Rectifier
MOSFET N-CH 500V 46A SUPER247
Vishay Siliconix
MOSFET N-CH 500V 46A SUPER247
Vishay Siliconix
MOSFET N-CH 500V 46A SUPER247
Vishay Intertechnology
Power Field-Effect Transistor, 46A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA, SUPER-247, 3 PIN
Vishay Semiconductor
Trans MOSFET N-CH 500V 46A 3Pin Super-247
Vishay Precision Group
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.087Ω; ID 46A; TO-274AA; PD 540W; VGS +/-30V
IRF
Power MOSFET(Vdss=500V, Rds(on)typ.=0.087Ω, Id=46A)
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