TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Power Rating | 42 W |
Drain to Source Resistance (on) (Rds) | 100 mΩ |
Polarity | N-Channel |
Power Dissipation | 2.5 W |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 14.0 A |
Rise Time | 58 ns |
Input Capacitance (Ciss) | 640pF @25V(Vds) |
Input Power (Max) | 2.5 W |
Fall Time | 42 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Size-Length | 6.73 mm |
Size-Width | 6.22 mm |
Size-Height | 2.38 mm |
Operating Temperature | -55℃ ~ 150℃ |
Minimum Packing Quantity | 2000 |
Single N-Channel 60 V 0.1 Ohms Surface Mount Power Mosfet - TO-252
VISHAY
11 Pages / 1.45 MByte
VISHAY
11 Pages / 1.01 MByte
VISHAY
Trans MOSFET N-CH 60V 14A 3Pin(2+Tab) DPAK
International Rectifier
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Vishay Semiconductor
Trans MOSFET N-CH 60V 14A 3Pin(2+Tab) DPAK
Samsung
Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Infineon
Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3/2
Vishay Intertechnology
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
Fairchild
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.