| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 110 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0071 Ω |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 79A |
| Rise Time | 35 ns |
| Input Capacitance (Ciss) | 2290pF @50V(Vds) |
| Input Power (Max) | 110 W |
| Fall Time | 46 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 110W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFR1018EPBF is a N-channel HEXFET® Power MOSFET with high speed power switching and high frequency circuits.
● Dynamic dv/dt rating
● Fully avalanche rated
Infineon
10 Pages / 0.36 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
International Rectifier
Trans MOSFET N-CH 60V 79A 3Pin(2+Tab) DPAK Tube
International Rectifier
Trans MOSFET N-CH 60V 79A 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans MOSFET N-CH 60V 79A 3Pin(2+Tab) DPAK T/R
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