| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 37.0 A |
| Case/Package | TO-252-3 |
| Drain to Source Resistance (on) (Rds) | 20 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 107 W |
| Part Family | IRFR1205 |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55.0 V |
| Continuous Drain Current (Ids) | 44.0 A |
| Rise Time | 69.0 ns |
| Input Capacitance (Ciss) | 1300pF @25V(Vds) |
| Input Power (Max) | 107 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ |
Description
●Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
●• Ultra Low On-Resistance
●• Surface Mount (IRFR1205)
●• Straight Lead (IRFU1205)
●• Fast Switching
●• Fully Avalanche Rated
●• Lead-Free
International Rectifier
11 Pages / 0.14 MByte
International Rectifier
1 Pages / 0.42 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.027Ω; ID 44A; D-Pak (TO-252AA); PD 107W
International Rectifier
Trans MOSFET N-CH 55V 44A 3Pin(2+Tab) DPAK Tube
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.027Ω; ID 44A; D-Pak (TO-252AA); PD 107W
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
