| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 27 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 107 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55 V |
| Continuous Drain Current (Ids) | 44A |
| Rise Time | 69 ns |
| Input Capacitance (Ciss) | 1300pF @25V(Vds) |
| Fall Time | 60 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 107W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.3 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Single N-Channel 55 V 107 W 65 nC Hexfet Power Mosfet Surface Mount - TO-252AA
Infineon
11 Pages / 0.38 MByte
Infineon
11 Pages / 0.33 MByte
Infineon
2 Pages / 0.17 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.027Ω; ID 44A; D-Pak (TO-252AA); PD 107W
International Rectifier
Trans MOSFET N-CH 55V 44A 3Pin(2+Tab) DPAK Tube
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.027Ω; ID 44A; D-Pak (TO-252AA); PD 107W
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