| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 37.0 A |
| Case/Package | TO-252-3 |
| Drain to Source Resistance (on) (Rds) | 0.027 Ω |
| Polarity | N-Channel |
| Power Dissipation | 107 W |
| Part Family | IRFR1205 |
| Threshold Voltage | 4 V |
| Input Capacitance | 1300pF @25V |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55 V |
| Continuous Drain Current (Ids) | 44.0 A, 37.0 A |
| Rise Time | 69.0 ns |
| Input Capacitance (Ciss) | 1300pF @25V(Vds) |
| Input Power (Max) | 107 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ |
●HEXFET® N-Channel Power MOSFET up to 50A, Infineon
●HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
International Rectifier
11 Pages / 0.14 MByte
International Rectifier
11 Pages / 0.38 MByte
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.027Ω; ID 44A; D-Pak (TO-252AA); PD 107W
International Rectifier
Trans MOSFET N-CH 55V 44A 3Pin(2+Tab) DPAK Tube
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.027Ω; ID 44A; D-Pak (TO-252AA); PD 107W
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