TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Power Rating | 35 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.19 Ω |
Polarity | N-CH |
Power Dissipation | 35 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 100 V |
Continuous Drain Current (Ids) | 8.7A |
Rise Time | 26 ns |
Input Capacitance (Ciss) | 310pF @25V(Vds) |
Fall Time | 23 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 35W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
Material | Silicon |
Size-Length | 6.73 mm |
Size-Width | 6.22 mm |
Size-Height | 2.39 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFR120ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced process technology
● Repetitive avalanche allowed up to Tjmax
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