| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 110 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.235 Ω |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Threshold Voltage | 5.5 V |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 13A |
| Rise Time | 27 ns |
| Input Capacitance (Ciss) | 830pF @25V(Vds) |
| Input Power (Max) | 110 W |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 110W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFR13N20DPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
● Fully characterized avalanche voltage and current
● Fully characterized capacitance including effective COSS to simplify design
Infineon
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IRF
Power MOSFET(Vdss=200V, Rds(on)max=0.235Ω, Id=13A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.235Ω; ID 13A; D-Pak (TO-252AA); PD 110W
International Rectifier
Trans MOSFET N-CH 200V 13A 3Pin(2+Tab) DPAK Tube
International Rectifier
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