| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | 250 V |
| Current Rating | 2.20 A |
| Case/Package | TO-252 |
| Drain to Source Voltage (Vds) | 250 V |
| Continuous Drain Current (Ids) | 2.20 A |
| Rise Time | 7.60 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. • 1.7A, 400V, RDS(on) = 3.4Ω @VGS = 10 V • Low gate charge ( typical 7.7 nC) • Low Crss ( typical 6.0 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
International Rectifier
11 Pages / 0.83 MByte
International Rectifier
6 Pages / 0.16 MByte
International Rectifier
10 Pages / 2.09 MByte
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