| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 5.00 A |
| Case/Package | TO-252 |
| Polarity | N-Channel |
| Power Dissipation | 43.0 W |
| Part Family | IRFR220N |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200V (min) |
| Continuous Drain Current (Ids) | 5.00 A |
| Rise Time | 11.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
International Rectifier
11 Pages / 0.16 MByte
International Rectifier
11 Pages / 0.13 MByte
International Rectifier
10 Pages / 0.12 MByte
International Rectifier
Mosfet n-Ch 200V 4.8A Dpak
Intersil
Trans MOSFET N-CH 200V 4.8A 3Pin(2+Tab) DPAK Trans MOSFET N-CH 200V 4.8A 3Pin(2+Tab) DPAK Trans MOSFET N-CH 200V 4....
VISHAY
MOSFET N-CH 200V 4.8A DPAK
Fairchild
Trans MOSFET N-CH Si 200V 4.6A 3Pin(2+Tab) TO-252AA
Philips
N-channel enhancement mode field effect transistor
Infineon
Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3
Samsung
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Vishay Siliconix
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Harris
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Vishay Intertechnology
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
