| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Polarity | N-Channel |
| Power Dissipation | 43W (Tc) |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 5A |
| Rise Time | 11 ns |
| Input Capacitance (Ciss) | 300pF @25V(Vds) |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 43W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
Infineon
11 Pages / 0.21 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
International Rectifier
Mosfet n-Ch 200V 4.8A Dpak
Intersil
Trans MOSFET N-CH 200V 4.8A 3Pin(2+Tab) DPAK Trans MOSFET N-CH 200V 4.8A 3Pin(2+Tab) DPAK Trans MOSFET N-CH 200V 4....
VISHAY
MOSFET N-CH 200V 4.8A DPAK
Fairchild
Trans MOSFET N-CH Si 200V 4.6A 3Pin(2+Tab) TO-252AA
Philips
N-channel enhancement mode field effect transistor
Infineon
Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3
Samsung
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Vishay Siliconix
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Harris
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Vishay Semiconductor
Trans MOSFET N-CH 200V 4.8A 3Pin(2+Tab) DPAK
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
