| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Drain to Source Resistance (on) (Rds) | 800 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 4.8A |
| Rise Time | 22 ns |
| Input Capacitance (Ciss) | 260pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 2000 |
Single N-Channel 200 V 0.8 Ohms Surface Mount Power Mosfet - TO-252
VISHAY
8 Pages / 1.39 MByte
International Rectifier
Mosfet n-Ch 200V 4.8A Dpak
Intersil
Trans MOSFET N-CH 200V 4.8A 3Pin(2+Tab) DPAK Trans MOSFET N-CH 200V 4.8A 3Pin(2+Tab) DPAK Trans MOSFET N-CH 200V 4....
VISHAY
MOSFET N-CH 200V 4.8A DPAK
Fairchild
Trans MOSFET N-CH Si 200V 4.6A 3Pin(2+Tab) TO-252AA
Philips
N-channel enhancement mode field effect transistor
Infineon
Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3
Samsung
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
Vishay Siliconix
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Harris
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Vishay Semiconductor
Trans MOSFET N-CH 200V 4.8A 3Pin(2+Tab) DPAK
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
