| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 0.8 Ω |
| Polarity | N-Channel |
| Power Dissipation | 42 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 4.80 A |
| Rise Time | 22 ns |
| Input Capacitance (Ciss) | 260pF @25V(Vds) |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 42 W |
| TYPE | DESCRIPTION |
|---|
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.38 mm |
| Operating Temperature | -55℃ ~ 150℃ |
Power MOSFET
●DESCRIPTION
●Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
●The DPAK is designed for surface mounting using vaporphase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surcace mount applications.
●FEATURES
●• Dynamic dV/dt Rating
●• Repetitive Avalanche Rated
●• Surface Mount (IRFR220/SiHFR220)
●• Straight Lead (IRFU220/SiHFU220)
●• Available in Tape and Reel
●• Fast Switching
●• Ease of Paralleling
●• Lead (Pb)-free Available
Vishay Semiconductor
8 Pages / 1.41 MByte
Vishay Semiconductor
11 Pages / 0.76 MByte
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