TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Power Rating | 52 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.115 Ω |
Polarity | N-Channel |
Power Dissipation | 79 W |
Threshold Voltage | 4 V |
Input Capacitance | 640 pF |
Drain to Source Voltage (Vds) | 100 V |
Continuous Drain Current (Ids) | 16A |
Rise Time | 27 ns |
Input Capacitance (Ciss) | 640pF @25V(Vds) |
Fall Time | 25 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 79W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
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International Rectifier
Trans MOSFET N-CH 100V 16A 3Pin (2+Tab) DPAK
IRF
Power MOSFET(Vdss=100V, Rds=0.115Ω, Id=16A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.115Ω; ID 16A; D-Pak (TO-252AA); PD 79W
International Rectifier
Trans MOSFET N-CH 100V 16A 3Pin(2+Tab) DPAK Tube
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.115Ω; ID 16A; D-Pak (TO-252AA); PD 79W
International Rectifier
MOSFET N-CH 100V 16A DPAK
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