TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Power Rating | 48 W |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.045 Ω |
Polarity | N-Channel |
Power Dissipation | 46 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 55 V |
Continuous Drain Current (Ids) | 27A |
Rise Time | 49 ns |
Input Capacitance (Ciss) | 700pF @25V(Vds) |
Fall Time | 40 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 68W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 6.73 mm |
Size-Width | 6.22 mm |
Size-Height | 2.39 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
Infineon
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International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.045Ω; ID 27A; D-Pak (TO-252AA); PD 68W
International Rectifier
Trans MOSFET N-CH 55V 30A 3Pin(2+Tab) DPAK Tube
International Rectifier
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