TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Polarity | P-CH |
Power Dissipation | 110 W |
Drain to Source Voltage (Vds) | 55 V |
Continuous Drain Current (Ids) | 31A |
Rise Time | 66 ns |
Input Capacitance (Ciss) | 1200pF @25V(Vds) |
Fall Time | 63 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 110W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Height | 2.39 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
P-Channel 55 V 31A (Tc) 110W (Tc) Surface Mount D-Pak
Infineon
11 Pages / 0.15 MByte
Infineon
11 Pages / 0.21 MByte
International Rectifier
Trans MOSFET P-CH 55V 31A 3Pin(2+Tab) DPAK
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.065Ω; ID -31A; D-Pak (TO-252AA); PD 110W
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.065Ω; ID -31A; D-Pak (TO-252AA); PD 110W
International Rectifier
Trans MOSFET P-CH 55V 31A 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans MOSFET P-CH Si 55V 31A 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans MOSFET P-CH 55V 31A 3Pin(2+Tab) DPAK T/R
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