| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -55.0 V |
| Current Rating | -31.0 A |
| Case/Package | TO-252-3 |
| Drain to Source Resistance (on) (Rds) | 0.065 Ω |
| Polarity | P-Channel |
| Power Dissipation | 110 W |
| Part Family | IRFR5305 |
| Input Capacitance | 1.20 nF |
| Gate Charge | 63.0 nC |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | -31.0 A |
| Rise Time | 66.0 ns |
| Input Capacitance (Ciss) | 1200pF @25V(Vds) |
| Input Power (Max) | 110 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.41 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ |
●HEXFET® P-Channel Power MOSFETs, Infineon
●HEXFET® Power MOSFETs present a variety of rugged single P-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
International Rectifier
11 Pages / 0.15 MByte
International Rectifier
10 Pages / 0.15 MByte
International Rectifier
Trans MOSFET P-CH 55V 31A 3Pin(2+Tab) DPAK
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.065Ω; ID -31A; D-Pak (TO-252AA); PD 110W
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.065Ω; ID -31A; D-Pak (TO-252AA); PD 110W
International Rectifier
Trans MOSFET P-CH 55V 31A 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans MOSFET P-CH Si 55V 31A 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans MOSFET P-CH 55V 31A 3Pin(2+Tab) DPAK T/R
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
