| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 66 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.205 Ω |
| Polarity | P-Channel |
| Power Dissipation | 66 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 13A |
| Rise Time | 58 ns |
| Input Capacitance (Ciss) | 760pF @25V(Vds) |
| Fall Time | 46 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 66W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 2.39 mm |
| Size-Height | 6.22 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRFR5410PBF is a -100V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques.
● Ultra low on-resistance
● Advanced process technology
● Fully avalanche rated
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International Rectifier
Trans MOSFET P-CH 100V 13A 3Pin(2+Tab) DPAK
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.205Ω; ID -13A; D-Pak (TO-252AA); PD 66W
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.205Ω; ID -13A; D-Pak (TO-252AA); PD 66W
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.205Ω; ID -13A; D-Pak (TO-252AA); PD 66W
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.205Ω; ID -13A; D-Pak (TO-252AA); PD 66W
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