| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 66 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.205 Ω |
| Polarity | P-CH |
| Power Dissipation | 66 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 13A |
| Rise Time | 58 ns |
| Input Capacitance (Ciss) | 760pF @25V(Vds) |
| Input Power (Max) | 66 W |
| Fall Time | 46 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 66W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRFR5410TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
● Advanced process technology
● Fully avalanche rating
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
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International Rectifier
Trans MOSFET P-CH 100V 13A 3Pin(2+Tab) DPAK
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.205Ω; ID -13A; D-Pak (TO-252AA); PD 66W
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.205Ω; ID -13A; D-Pak (TO-252AA); PD 66W
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.205Ω; ID -13A; D-Pak (TO-252AA); PD 66W
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.205Ω; ID -13A; D-Pak (TO-252AA); PD 66W
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