| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -13.0 A |
| Case/Package | TO-252-3 |
| Drain to Source Resistance (on) (Rds) | 0.205 Ω |
| Polarity | P-Channel |
| Power Dissipation | 66 W |
| Part Family | IRFR5410 |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 13.0 A, -13.0 A |
| Rise Time | 58.0 ns |
| Input Capacitance (Ciss) | 760pF @25V(Vds) |
| Input Power (Max) | 66 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
| Size-Length | 6.73 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 150℃ |
●HEXFET® P-Channel Power MOSFETs, Infineon
●HEXFET® Power MOSFETs present a variety of rugged single P-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
International Rectifier
11 Pages / 0.26 MByte
International Rectifier
10 Pages / 0.21 MByte
International Rectifier
Trans MOSFET P-CH 100V 13A 3Pin(2+Tab) DPAK
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.205Ω; ID -13A; D-Pak (TO-252AA); PD 66W
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.205Ω; ID -13A; D-Pak (TO-252AA); PD 66W
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.205Ω; ID -13A; D-Pak (TO-252AA); PD 66W
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.205Ω; ID -13A; D-Pak (TO-252AA); PD 66W
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