| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Polarity | P-Channel |
| Power Dissipation | 57 W |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 18A |
| Rise Time | 28 ns |
| Input Capacitance (Ciss) | 650pF @25V(Vds) |
| Fall Time | 16 ns |
| Power Dissipation (Max) | 57W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
● P-Channel MOSFET
Infineon
10 Pages / 0.26 MByte
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270 Pages / 11.59 MByte
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12 Pages / 0.23 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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5 Pages / 0.32 MByte
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11 Pages / 0.28 MByte
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.11Ω; ID -18A; D-Pak (TO-252AA); PD 57W
International Rectifier
Trans MOSFET P-CH 55V 18A 3Pin(2+Tab) DPAK Tube
International Rectifier
Trans MOSFET P-CH 55V 18A 3Pin(2+Tab) DPAK T/R
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.11Ω; ID -18A; D-Pak (TO-252AA); PD 57W
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