| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 119 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.05 Ω |
| Polarity | N-Channel |
| Power Dissipation | 119 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 6A |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 1346pF @25V(Vds) |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 119W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRFR825PBF is a HEXFET® single N-channel Power MOSFET offers fast body diode eliminates the need for external diodes in ZVS applications. It is suitable for zero voltage switching SMPS.
● Lower gate charge results in simpler drive requirements
● High gate voltage threshold offers improved noise immunity
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