| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 3 Ω |
| Polarity | P-Channel |
| Power Dissipation | 25 W |
| Drain to Source Voltage (Vds) | -200 V |
| Continuous Drain Current (Ids) | -1.90 A |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
The IRFR9210PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Surface-mount
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