| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 86 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.38 Ω |
| Polarity | N-Channel |
| Power Dissipation | 86 W |
| Threshold Voltage | 5.5 V |
| Input Capacitance | 560pF @25V |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 9.4A |
| Rise Time | 16 ns |
| Input Capacitance (Ciss) | 560pF @25V(Vds) |
| Fall Time | 9.3 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 86W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ |
The IRFR9N20DPBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
Infineon
11 Pages / 0.22 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
6 Pages / 0.15 MByte
International Rectifier
Trans MOSFET N-CH 200V 9.4A 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans MOSFET N-CH 200V 9.4A 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans MOSFET N-CH 200V 9.4A 3Pin (2+Tab) DPAK
International Rectifier
Trans MOSFET N-CH 200V 9.4A 3Pin(2+Tab) DPAK T/R
International Rectifier
MOSFET N-CH 200V 9.4A DPAK
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
