| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 42 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 4.4 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 2.00 A |
| Rise Time | 23 ns |
| Input Capacitance (Ciss) | 350pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRFRC20PBF is a 600V N-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The DPAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5W are possible in typical surface mount applications.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Easy to parallel
● Fast switching
VISHAY
8 Pages / 1.81 MByte
VISHAY
11 Pages / 1.08 MByte
VISHAY
3 Pages / 0.09 MByte
Vishay Intertechnology
Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
VISHAY
TO-252-3 N-CH 600V 2A 4.4Ω
Vishay Semiconductor
VISHAY IRFRC20PBF Power MOSFET, N Channel, 2A, 600V, 4.4Ω, 10V, 4V
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