| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 2.00 A |
| Case/Package | TO-252-3 |
| Polarity | N-Channel |
| Power Dissipation | 42.0 W |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Continuous Drain Current (Ids) | 2.00 A |
| Rise Time | 23.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
DESCRIPTION
●Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
●• Dynamic dV/dt Rating
●• Repetitive Avalanche Rated
●• Surface Mount (IRFRC20/SiHFRC20)
●• Straight Lead (IRFUC20/SiHFUC20)
●• Available in Tape and Reel
●• Fast Switching
●• Ease of Paralleling
●• Lead-free
International Rectifier
10 Pages / 1.05 MByte
International Rectifier
11 Pages / 1.89 MByte
Vishay Intertechnology
Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
VISHAY
TO-252-3 N-CH 600V 2A 4.4Ω
Vishay Semiconductor
VISHAY IRFRC20PBF Power MOSFET, N Channel, 2A, 600V, 4.4Ω, 10V, 4V
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