| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.09 Ω |
| Polarity | N-Channel |
| Power Dissipation | 3.8 W |
| Threshold Voltage | 5.5 V |
| Input Capacitance | 1200 pF |
| Drain to Source Voltage (Vds) | 150 V |
| Continuous Drain Current (Ids) | 23A |
| Rise Time | 32 ns |
| Input Capacitance (Ciss) | 1200pF @25V(Vds) |
| Input Power (Max) | 3.8 W |
| Fall Time | 8.4 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.8W (Ta), 136W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.67 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Industry-leading quality
● Fully Characterized Avalanche Voltage and Current
● Low Gate-to-Drain Charge to Reduce Switching Losses
● Fully Characterized Capacitance Including Effective Coss to Simplify Design
Infineon
11 Pages / 0.33 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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5 Pages / 0.32 MByte
International Rectifier
MOSFET MOSFT 150V 23A 90mOhm 37NC
International Rectifier
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.09Ω; ID 23A; D2Pak; PD 136W; VGS +/-30V; -55
International Rectifier
MOSFET N-CH 150V 23A D2PAK
IRF
Power MOSFET(Vdss=150V, Rds(on)max=0.09Ω, Id=23A)
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