| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 7 Pin |
| Case/Package | TO-263-7 |
| Number of Channels | 1 Channel |
| Number of Positions | 7 Position |
| Drain to Source Resistance (on) (Rds) | 0.0021 Ω |
| Polarity | N-Channel |
| Power Dissipation | 370 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 75 V |
| Breakdown Voltage (Drain to Source) | 75 V |
| Continuous Drain Current (Ids) | 260A |
| Rise Time | 80 ns |
| Input Capacitance (Ciss) | 9200pF @50V(Vds) |
| Fall Time | 64 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 370W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFS3107-7PPBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
● Improved gate, avalanche and dynamic dv/dt ruggedness
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and dI/dt capability
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International Rectifier
Trans MOSFET N-CH 75V 260A 7Pin(6+Tab) D2PAK Tube
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Transistor: N-MOSFET; unipolar; HEXFET; 75V; 260A; 370W; D2PAK-7
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75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7Pin package
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