TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-263-3 |
Power Rating | 375 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0103 Ω |
Polarity | N-Channel |
Power Dissipation | 375 W |
Threshold Voltage | 5 V |
Drain to Source Voltage (Vds) | 150 V |
Continuous Drain Current (Ids) | 195A |
Rise Time | 73 ns |
Input Capacitance (Ciss) | 5270pF @50V(Vds) |
Input Power (Max) | 375 W |
Fall Time | 39 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 375000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
Material | Silicon |
Size-Length | 10.67 mm |
Size-Width | 9.65 mm |
Size-Height | 4.83 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFS4115PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
Infineon
9 Pages / 0.28 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
9 Pages / 0.14 MByte
Infineon
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International Rectifier
Trans MOSFET N-CH 150V 195A 3Pin(2+Tab) D2PAK T/R
International Rectifier
Trans MOSFET N-CH 150V 195A 3Pin(2+Tab) D2PAK Tube
International Rectifier
Trans MOSFET N-CH 150V 105A 7Pin(6+Tab) D2PAK Tube
International Rectifier
N-Ch 150V 105A 380W 0, 0118R D²Pak-7
Infineon
150V Single N-Channel HEXFET Power MOSFET in a 7Pin D2-Pak package
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.