| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 7 Pin |
| Case/Package | TO-263-7 |
| Power Rating | 375 W |
| Number of Positions | 7 Position |
| Drain to Source Resistance (on) (Rds) | 0.00115 Ω |
| Polarity | N-Channel |
| Power Dissipation | 375 W |
| Threshold Voltage | 3.7 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 338A |
| Rise Time | 102 ns |
| Input Capacitance (Ciss) | 12960pF @25V(Vds) |
| Fall Time | 79 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 375000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFS7530TRL7PP is a 60V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. The StrongIRFET™ HEXFET® power MOSFET is suitable for battery powered circuits, synchronous rectifier applications, half-bridge and full-bridge topologies.
● Improved gate, avalanche and dynamic dv/dt ruggedness
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and dI/dt capability
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International Rectifier
The IRFS7530TRL7PP is a 60V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. The StrongIRFET™ HEXFET® power MOSFET is suitable for battery powered circuits, synchronous rectifier applications, half-bridge and full-bridge topologies.
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