| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 7 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 7 Position |
| Drain to Source Resistance (on) (Rds) | 0.0016 Ω |
| Polarity | N-Channel |
| Power Dissipation | 290 W |
| Threshold Voltage | 3.7 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 255A |
| Rise Time | 120 ns |
| Input Capacitance (Ciss) | 9990pF @25V(Vds) |
| Fall Time | 86 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 290 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFS7534TRL7PP is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-DC and AC-to-DC converters.
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
Infineon
11 Pages / 0.5 MByte
Infineon
270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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3 Pages / 0.19 MByte
International Rectifier
Trans MOSFET N-CH 60V 255A 7Pin(6+Tab) D2PAK T/R
Infineon
Transistor: N-MOSFET; unipolar; 60V; 240A; 290W; D2PAK-7
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