| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SOT-23-6 |
| Power Rating | 2 W |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.032 Ω |
| Polarity | P-Channel |
| Power Dissipation | 2 W |
| Input Capacitance | 595 pF |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 5.8A |
| Rise Time | 13 ns |
| Input Capacitance (Ciss) | 595pF @25V(Vds) |
| Fall Time | 28 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.75 mm |
| Size-Height | 1.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRFTS9342TRPBF is a HEXFET® single P-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-DC and AC-to-DC converters.
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
● Industry standard pin-out
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