| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.2 Ω |
| Polarity | N-Channel |
| Power Dissipation | 30 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 7.70 A |
| Rise Time | 50 ns |
| Input Capacitance (Ciss) | 300pF @25V(Vds) |
| Fall Time | 19 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 6.73 mm |
| Size-Width | 2.39 mm |
| Size-Height | 6.22 mm |
| Lead Length | 9.65 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The IRFU014PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
● Dynamic dV/dt rating
● Ease of paralleling
● Straight lead
● Simple drive requirements
Vishay Semiconductor
11 Pages / 0.85 MByte
Vishay Semiconductor
11 Pages / 0.84 MByte
Vishay Semiconductor
4 Pages / 0.23 MByte
International Rectifier
Power MOSFET(Vdss = 60V, Rds(on) = 0.2Ω, Id= 7.7A)
Vishay Siliconix
MOSFET N-CH 60V 7.7A I-PAK
Vishay Semiconductor
Trans MOSFET N-CH 60V 7.7A 3Pin(3+Tab) IPAK
Vishay Intertechnology
Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
Fairchild
Power Field-Effect Transistor, 8.2A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
VISHAY
TO-251-3 N-CH 60V 7.7A 200mΩ
Vishay Semiconductor
Trans MOSFET N-CH 60V 7.7A 3Pin(3+Tab) IPAK
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
