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IRFU220 Datasheet PDF - Samsung
| Manufacturer: | Samsung |
| Description: | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 |
| Documentation: | IRFU220 Datasheet (11 Pages)Package Outline Dimension on8 Page9 Page Part Numbering System on11 Page |
| Pictures: |
IRFU220 Datasheet PDF (11 Pages)
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