| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251-3 |
| Power Rating | 89 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.065 Ω |
| Polarity | P-Channel |
| Power Dissipation | 69 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 31A |
| Rise Time | 66 ns |
| Input Capacitance (Ciss) | 1200pF @25V(Vds) |
| Input Power (Max) | 110 W |
| Fall Time | 63 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 110W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 6.6 mm |
| Size-Width | 2.3 mm |
| Size-Height | 6.1 mm |
| Lead Length | 9.65 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFU5305PBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques.
● Ultra low on-resistance
● Advanced process technology
● Fully avalanche rated
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11 Pages / 0.23 MByte
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270 Pages / 11.59 MByte
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7 Pages / 0.14 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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6 Pages / 0.15 MByte
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International Rectifier
MOSFET P-CH 55V 31A I-PAK
IRF
Power MOSFET(Vdss=-55V, Rds(on)=0.065Ω, Id=-31A)
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.065Ω; ID -31A; I-Pak (TO-251AA); PD 110W
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