| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -1.60 A |
| Case/Package | TO-251-3 |
| Polarity | P-CH |
| Power Dissipation | 38W (Tc) |
| Part Family | IRFU9024N |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 11.0 A |
| Rise Time | 55.0 ns |
| Input Capacitance (Ciss) | 350pF @25V(Vds) |
| Power Dissipation (Max) | 38W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
● P-Channel MOSFET
Infineon
11 Pages / 0.12 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
11 Pages / 1.31 MByte
Infineon
37 Pages / 2.01 MByte
International Rectifier
MOSFET P-CH 60V 8.8A I-PAK
Vishay Siliconix
MOSFET P-CH 60V 8.8A I-PAK
Vishay Semiconductor
Trans MOSFET P-CH 60V 8.8A 3Pin(3+Tab) IPAK
Vishay Intertechnology
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, I-PAK-3
Infineon
Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, IPAK-3
VISHAY
TO-251-3P-CH 60V 8.8A 280mΩ
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.175Ω; ID -11A; I-Pak (TO-251AA); PD 38W
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
