| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251 |
| Power Rating | 42 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.28 Ω |
| Polarity | P-Channel |
| Power Dissipation | 50 W |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | -8.80 A |
| Rise Time | 68 ns |
| Fall Time | 29 ns |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Lead Length | 9.65 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The IRFU9024PBF is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
● Dynamic dV/dt rating
● Ease of paralleling
● Straight lead
● Repetitive avalanche rated
Vishay Semiconductor
11 Pages / 0.12 MByte
Vishay Semiconductor
11 Pages / 1.09 MByte
Vishay Semiconductor
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