| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-251-3 |
| Power Dissipation | 42 W |
| Drain to Source Voltage (Vds) | 60 V |
| Rise Time | 68 ns |
| Input Capacitance (Ciss) | 570pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 29 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 6.73 mm |
| Size-Width | 2.39 mm |
| Size-Height | 6.22 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
●Vishay IRFU Series Power MOSFETs
●Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
●Features:
● Fast Switching
● P-Channel
● Dynamic dV/dt Rating
● Compliant to RoHS Directive 2002/95/EC
● Ease of Paralleling
Vishay Siliconix
11 Pages / 1.11 MByte
Vishay Siliconix
12 Pages / 1.2 MByte
Vishay Siliconix
2 Pages / 0.04 MByte
International Rectifier
MOSFET P-CH 60V 8.8A I-PAK
Vishay Siliconix
MOSFET P-CH 60V 8.8A I-PAK
Vishay Semiconductor
Trans MOSFET P-CH 60V 8.8A 3Pin(3+Tab) IPAK
Vishay Intertechnology
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, I-PAK-3
Infineon
Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, IPAK-3
VISHAY
TO-251-3P-CH 60V 8.8A 280mΩ
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.175Ω; ID -11A; I-Pak (TO-251AA); PD 38W
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