TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-251 |
Polarity | P-Channel |
Power Dissipation | 50 W |
Drain to Source Voltage (Vds) | 400 V |
Continuous Drain Current (Ids) | -1.80 A |
Rise Time | 10 ns |
Input Capacitance (Ciss) | 270pF @25V(Vds) |
Input Power (Max) | 50 W |
Fall Time | 24 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 50 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 6.73 mm |
Size-Width | 2.38 mm |
Size-Height | 6.22 mm |
Lead Length | 9.65 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Single P-Channel 400 V 7 Ohms Through Hole Power Mosfet - TO-251
VISHAY
11 Pages / 0.24 MByte
VISHAY
11 Pages / 0.23 MByte
Vishay Siliconix
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International Rectifier
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Vishay Intertechnology
Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, IPAK-3
VISHAY
Single P-Channel 400V 7Ω Through Hole Power Mosfet - TO-251
Vishay Semiconductor
Trans MOSFET P-CH 400V 1.8A 3Pin(3+Tab) IPAK
Vishay Siliconix
MOSFET P-CH 400V 1.8A I-PAK
International Rectifier
MOSFET P-CH 400V 1.8A I-PAK
Vishay Intertechnology
Power Field-Effect Transistor, 1.8A I(D), 400V, 7Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, DPAK-3
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